Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
نویسندگان
چکیده
منابع مشابه
Hydrogen-Surfactant Mediated Growth of Ge on Si(001)
S.-J. Kahng,1 Y. H. Ha,2 J.-Y. Park,1 S. Kim,2 D. W. Moon,3 and Y. Kuk1,* 1Center for Science in Nanometer Scale and Department of Physics, Seoul National University, Seoul, 151-742, Korea 2Department of Chemistry, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea 3Surface Analysis Group, Korea Research Institute of Standards and Science, Taejon, 305-606, Korea (Receive...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2007
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.75.241309